Invention Grant
- Patent Title: III-nitride multi-wavelength LED arrays with etch stop layer
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Application No.: US17190781Application Date: 2021-03-03
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Publication No.: US11631786B2Publication Date: 2023-04-18
- Inventor: Robert Armitage , Isaac Wildeson
- Applicant: Lumileds LLC
- Applicant Address: US CA San Jose
- Assignee: Lumileds LLC
- Current Assignee: Lumileds LLC
- Current Assignee Address: US CA San Jose
- Agency: Servilla Whitney LLC
- Main IPC: H01L33/32
- IPC: H01L33/32 ; H01L33/00 ; H01L27/15 ; H05B45/30 ; H01L33/50 ; H01L33/06
Abstract:
An LED array comprises a first mesa comprising a top surface, at least a first LED including a first p-type layer, a first n-type layer and a first color active region and a tunnel junction on the first LED, a second n-type layer on the tunnel junction, the second n-type layer comprising at least one n-type III-nitride layer with >10% Al mole fraction and at least one n-type III-nitride layer with
Public/Granted literature
- US20220149237A1 III-Nitride Multi-Wavelength LED Arrays With Etch Stop Layer Public/Granted day:2022-05-12
Information query
IPC分类:
