Invention Grant
- Patent Title: Magnetoresistive effect element and magnetic memory
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Application No.: US16969771Application Date: 2019-02-13
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Publication No.: US11631804B2Publication Date: 2023-04-18
- Inventor: Yoshiaki Saito , Shoji Ikeda , Hideo Sato , Tetsuo Endoh
- Applicant: TOHOKU UNIVERSITY
- Applicant Address: JP Sendai
- Assignee: TOHOKU UNIVERSITY
- Current Assignee: TOHOKU UNIVERSITY
- Current Assignee Address: JP Sendai
- Agency: Procopio, Cory, Hargeaves & Savitch LLP
- Priority: JPJP2018-023297 20180213
- International Application: PCT/JP2019/005091 WO 20190213
- International Announcement: WO2019/159962 WO 20190822
- Main IPC: H01L43/04
- IPC: H01L43/04 ; G11C11/16 ; G11C11/18 ; H01L27/22 ; H01L43/06 ; H01L43/10 ; H01F10/32
Abstract:
A perpendicular magnetization type three-terminal SOT-MRAM that does not need an external magnetic field is provided. A magnetoresistance effect element where a first magnetic layer/nonmagnetic spacer layer/recording layer are disposed in order, and the first magnetic layer and the nonmagnetic spacer layer are provided to a channel layer.
Public/Granted literature
- US20210074910A1 MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY Public/Granted day:2021-03-11
Information query
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