Invention Grant
- Patent Title: WSiGe electrode structures for memory devices, and associated devices and systems
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Application No.: US17315114Application Date: 2021-05-07
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Publication No.: US11631811B2Publication Date: 2023-04-18
- Inventor: Pengyuan Zheng , Yongjun J. Hu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: H01L45/00
- IPC: H01L45/00
Abstract:
Memory devices having electrode structures that increase in resistivity with thermal cycling, and associated systems and methods, are disclosed herein. In some embodiments, a memory device includes a memory element and an electrode structure electrically coupled to the memory element. The electrode structure can include a material comprising a composition of tungsten, silicon, and germanium.
Public/Granted literature
- US20220359822A1 ELECTRODE STRUCTURES FOR MEMORY DEVICES, AND ASSOCIATED DEVICES AND SYSTEMS Public/Granted day:2022-11-10
Information query
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