A method of fabricating an electronic device including a semiconductor memory includes forming a first conductive structure extending in a first direction and having a closed-loop shape, forming a second conductive structure extending in a second direction and having a closed-loop shape, the second direction intersecting the first direction, forming a memory cell located at an intersection of the first conductive structure and the second conductive structure, forming first conductive patterns extending in the first direction by etching an end portion of the first conductive structure, forming second conductive patterns extending in the second direction by etching an end portion of the second conductive structure, forming a first protective layer on an etched surface of each of the first conductive patterns and the second conductive patterns, and forming a gap-fill layer on the first protective layer.