Invention Grant
- Patent Title: Method for data storage and comparison, storage comparison circuit device, and semiconductor memory
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Application No.: US17178250Application Date: 2021-02-18
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Publication No.: US11632100B2Publication Date: 2023-04-18
- Inventor: Liang Zhang
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: CN201910949145.9 20191008
- Main IPC: H03K3/037
- IPC: H03K3/037 ; G11C11/412 ; H03K5/24 ; H03K19/094

Abstract:
Embodiments provide a method for data storage and comparison, a storage comparison circuit device, and a semiconductor memory. The storage comparison circuit device includes a latch and a comparator. The latch is configured to latch inputted first input data and output first output data and second output data. The first output data are the same as the first input data, whereas the second output data are different from the first input data, wherein the first output data and the second output data are respectively inputted into the comparator. The comparator is configured to receive second input data, the first output data and the second output data, and to output a comparison result. By using modular structures of the latch and the comparator, device data can be simplified for the latch and the comparator, chip area can be reduced, calculation amount can be reduced, and efficiency of data comparison can be improved.
Public/Granted literature
- US20210175877A1 METHOD FOR DATA STORAGE AND COMPARISON, STORAGE COMPARISON CIRCUIT DEVICE, AND SEMICONDUCTOR MEMORY Public/Granted day:2021-06-10
Information query
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