Invention Grant
- Patent Title: Solid-state image sensor and imaging device
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Application No.: US17507174Application Date: 2021-10-21
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Publication No.: US11632513B2Publication Date: 2023-04-18
- Inventor: Yosuke Ueno , Golan Zeituni , Noam Eshel , Yusuke Ikeda , Kiyoshi Makigawa
- Applicant: Sony Semiconductor Solutions Corporation
- Applicant Address: JP Kanagawa
- Assignee: Sony Semiconductor Solutions Corporation
- Current Assignee: Sony Semiconductor Solutions Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Michael Best & Friedrich LLP
- Priority: JPJP2017-149559 20170802,JPJP2018-129588 20180709
- Main IPC: H04N5/378
- IPC: H04N5/378 ; H04N5/3745

Abstract:
It makes it easier to reduce the line capacitance of vertical signal lines in a solid-state image sensor in which signals are output via the vertical signal lines.
The solid-state image sensor is provided with a logic circuit, a pixel circuit, and a negative capacitance circuit. In the solid-state image sensor, the logic circuit processes an analog signal. Also, in the solid-state image sensor, the pixel circuit generates an analog signal by photoelectric conversion, and outputs the analog signal to the logic circuit via a predetermined signal line. In the solid-state image sensor, the negative capacitance circuit is connected to the predetermined signal line.
The solid-state image sensor is provided with a logic circuit, a pixel circuit, and a negative capacitance circuit. In the solid-state image sensor, the logic circuit processes an analog signal. Also, in the solid-state image sensor, the pixel circuit generates an analog signal by photoelectric conversion, and outputs the analog signal to the logic circuit via a predetermined signal line. In the solid-state image sensor, the negative capacitance circuit is connected to the predetermined signal line.
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