Invention Grant
- Patent Title: Method for forming a semiconductor device having protrusion structures on a substrate and a planarized capping insulating layer on the protrusion structures
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Application No.: US17393201Application Date: 2021-08-03
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Publication No.: US11637019B2Publication Date: 2023-04-25
- Inventor: Chang Sun Hwang , Han Sol Seok , Hyun Ku Kang , Byoung Ho Kwon , Chung Ki Min
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: KR10-2018-0112457 20180919
- Main IPC: H01L21/3105
- IPC: H01L21/3105 ; H01L25/065 ; H01L21/762 ; H01L27/11582 ; H01L29/06 ; H01L27/11556 ; H01L21/78
Abstract:
A semiconductor device includes a stacked structure on a substrate. The stacked structure includes stepped regions and a central region between the stepped regions, an upper insulation layer on the stacked structure, and a capping insulation layer on the stepped regions of the stacked structure. The capping insulation layer includes a first upper end portion and a second upper end portion that are adjacent to the upper insulation layer. The upper insulation layer is between the first upper end portion and the second upper end portion. The first upper end portion and the second upper end portion extends a first height relative to the substrate that is different from a second height relative to the substrate of the second upper end portion.
Public/Granted literature
- US20210366720A1 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME Public/Granted day:2021-11-25
Information query
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