Invention Grant
- Patent Title: 3D chip package based on through-silicon-via interconnection elevator
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Application No.: US17026186Application Date: 2020-09-19
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Publication No.: US11637056B2Publication Date: 2023-04-25
- Inventor: Mou-Shiung Lin , Jin-Yuan Lee
- Applicant: iCometrue Company Ltd.
- Applicant Address: TW Zhubei
- Assignee: iCometrue Company Ltd.
- Current Assignee: iCometrue Company Ltd.
- Current Assignee Address: TW Zhubei
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/498

Abstract:
A chip package includes a first interconnection scheme; a plurality of first metal contacts under and on the first interconnection scheme and at a bottom surface of the chip package; a first semiconductor IC chip over the first interconnection scheme; a first connector over the first interconnection scheme and at a same horizontal level as the first semiconductor IC chip, wherein the first connector comprises a first substrate and a plurality of first through vias vertically extending through the first substrate of the first connector; a first polymer layer over the first interconnection scheme, wherein the first polymer layer has a top surface coplanar with a top surface of the first semiconductor IC chip, a top surface of the first substrate of the first connector and a top surface of each of the plurality of first through vias; and a second interconnection scheme on the top surface of the first polymer layer, the top surface of the first semiconductor IC chip, the top surface of the first connector and the top surface of each of the plurality of first through vias, wherein the second interconnection scheme comprises a plurality of second metal contacts at a top surface of the chip package.
Public/Granted literature
- US20210090983A1 3D CHIP PACKAGE BASED ON THROUGH-SILICON-VIA INTERCONNECTION ELEVATOR Public/Granted day:2021-03-25
Information query
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