Invention Grant
- Patent Title: Advanced metal connection with metal cut
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Application No.: US17098717Application Date: 2020-11-16
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Publication No.: US11637064B2Publication Date: 2023-04-25
- Inventor: Chih-Liang Chen , Cheng-Chi Chuang , Chih-Ming Lai , Chia-Tien Wu , Charles Chew-Yuen Young , Hui-Ting Yang , Jiann-Tyng Tzeng , Kam-Tou Sio , Ru-Gun Liu , Shun Li Chen , Shih-Wei Peng , Tien-Lu Lin
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsinchu
- Agency: Jones Day
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L21/768 ; H01L23/522 ; H01L27/02 ; H01L29/49

Abstract:
Examples of an integrated circuit a having an advanced two-dimensional (2D) metal connection with metal cut and methods of fabricating the same are provided. An example method for fabricating a conductive interconnection layer of an integrated circuit may include: patterning a conductive connector portion on the conductive interconnection layer of the integrated circuit using extreme ultraviolet (EUV) lithography, wherein the conductive connector portion is patterned to extend across multiple semiconductor structures in a different layer of the integrated circuit; and cutting the conductive connector portion into a plurality of conductive connector sections, wherein the conductive connector portion is cut by removing conductive material from the metal connector portion at one or more locations between the semiconductor structures.
Public/Granted literature
- US20210066182A1 Advanced Metal Connection With Metal Cut Public/Granted day:2021-03-04
Information query
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