Invention Grant
- Patent Title: Semiconductor device having three-dimensional structure
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Application No.: US17163891Application Date: 2021-02-01
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Publication No.: US11637075B2Publication Date: 2023-04-25
- Inventor: Sung Lae Oh , Sang Woo Park
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Priority: KR10-2020-0111624 20200902
- Main IPC: H01L23/00
- IPC: H01L23/00

Abstract:
A semiconductor device having a three-dimensional structure includes a first wafer including a first bonding pad on one surface thereof; a second wafer including a second bonding pad, which is bonded to the first bonding pad, on one surface thereof bonded to the one surface of the first wafer; a plurality of anti-warpage grooves on the one surface of the first wafer, and laid out in a stripe shape; and a plurality of anti-warpage ribs on the one surface of the second wafer and coupled respectively to the plurality of anti-warpage grooves, and laid out in a stripe shape.
Public/Granted literature
- US20220068844A1 SEMICONDUCTOR DEVICE HAVING THREE-DIMENSIONAL STRUCTURE Public/Granted day:2022-03-03
Information query
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