Invention Grant
- Patent Title: Method of forming a 3D stacked compute and memory
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Application No.: US17390829Application Date: 2021-07-30
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Publication No.: US11637090B2Publication Date: 2023-04-25
- Inventor: Sasikanth Manipatruni , Rajeev Kumar Dokania , Amrita Mathuriya , Ramamoorthy Ramesh
- Applicant: Kepler Computing Inc.
- Applicant Address: US CA San Francisco
- Assignee: Kepler Computing Inc.
- Current Assignee: Kepler Computing Inc.
- Current Assignee Address: US CA San Francisco
- Agency: Mughal IP P.C.
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L23/525 ; H01L23/00 ; G06F9/50 ; G11C7/10 ; G11C11/419 ; H01L27/11

Abstract:
Described is a packaging technology to improve performance of an AI processing system. An IC package is provided which comprises: a substrate; a first die on the substrate, and a second die stacked over the first die. The first die includes memory and the second die includes computational logic. The first die comprises a ferroelectric RAM (FeRAM) having bit-cells. Each bit-cell comprises an access transistor and a capacitor including ferroelectric material. The access transistor is coupled to the ferroelectric material. The FeRAM can be FeDRAM or FeSRAM. The memory of the first die may store input data and weight factors. The computational logic of the second die is coupled to the memory of the first die. The second die is an inference die that applies fixed weights for a trained model to an input data to generate an output. In one example, the second die is a training die that enables learning of the weights.
Public/Granted literature
- US20230015487A1 METHOD OF FORMING A 3D STACKED COMPUTE AND MEMORY Public/Granted day:2023-01-19
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