Invention Grant
- Patent Title: Integrated circuit device and method of manufacturing the same
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Application No.: US17036731Application Date: 2020-09-29
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Publication No.: US11637174B2Publication Date: 2023-04-25
- Inventor: Yoonyoung Choi , SangJae Park , Dongkyun Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2020-0033309 20200318
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L27/108

Abstract:
An integrated circuit device including a lower electrode on a substrate, the lower electrode including a first lower electrode portion extending in a first direction perpendicular to a top surface of the substrate and including a first main region and a first top region, and a second lower electrode portion extending in the first direction on the first lower electrode portion and including a second main region and a second top region; a first top supporting pattern surrounding at least a portion of a side wall of the first top region of the first lower electrode portion; and a second top supporting pattern surrounding at least a portion of a side wall of the second top region of the second lower electrode portion, and the second lower electrode portion includes a protrusion protruding outward to the second top supporting pattern.
Public/Granted literature
- US20210296431A1 INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2021-09-23
Information query
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