Invention Grant
- Patent Title: Gallium nitride gemstones
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Application No.: US17147266Application Date: 2021-01-12
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Publication No.: US11638470B2Publication Date: 2023-05-02
- Inventor: Arash Kani
- Applicant: Arash Kani
- Applicant Address: US CT Easton
- Assignee: Arash Kani
- Current Assignee: Arash Kani
- Current Assignee Address: US CT Easton
- Agency: Edlavitch Law PLLC
- Main IPC: A44C17/00
- IPC: A44C17/00

Abstract:
Different types of gallium nitride (GaN) gemstones can be produced synthetically for crafting jewelry. With some examples, a GaN gemstone can include a crystal (such as a single crystal that is typically used in semiconductor devices or other types of electronic components, e.g., electronic components with optical properties). The crystal of the gemstone can be grown to be relatively pure and translucent GaN as well as cut and polished to have facets of a gemstone. Also, the crystal can include doped GaN—such as GaN doped with indium or aluminum. The doping of the GaN can be to an extent to produce a visibly discernable color (such a tint of blue).
Public/Granted literature
- US20220218078A1 GALLIUM NITRIDE GEMSTONES Public/Granted day:2022-07-14
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