Compound, resin, photoresist composition and process for producing photoresist pattern

Invention Grant

US11640114B2 Compound, resin, photoresist composition and process for producing photoresist pattern 有权

Patent Title: Compound, resin, photoresist composition and process for producing photoresist pattern
Application No.: US16914763

Application Date: 2020-06-29
Publication No.: US11640114B2

Publication Date: 2023-05-02
Inventor: Masahiko Shimada , Koji Ichikawa
Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED
Applicant Address: JP Tokyo
Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED
Current Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED
Current Assignee Address: JP Tokyo
Agency: Birch, Stewart, Kolasch & Birch, LLP
Priority: JPJP2017-043569 20170308
Main IPC: G03F7/039
IPC: G03F7/039 ; C07D319/06 ; C08F220/68 ; G03F7/038 ; G03F7/004 ; C07D319/08 ; G03F7/30 ; G03F7/16 ; G03F7/20 ; G03F7/38

Abstract:

A compound represented by the formula (I): wherein R1, R2, R3, R4, X1, X2, Xa, Xb, L1, L2, L3 and L4 are defined in the specification.

Public/Granted literature

Information query

Espacenet

IPC分类:

G	物理
G03	摄影术；电影术；利用了光波以外其他波的类似技术；电记录术；全息摄影术
G03F	图纹面的照相制版工艺，例如，印刷工艺、半导体器件的加工工艺；其所用材料；其所用原版；其所用专用设备（照相排版装置入B41B；为摄影用的感光材料或处理入G03C；电记录、感光层或处理入G03G）
G03F7/00	图纹面，例如，印刷表面的照相制版如光刻工艺；图纹面照相制版用的材料，如：含光致抗蚀剂的材料；图纹面照相制版的专用设备（用于特殊工艺的光致抗蚀剂结构见相关的位置，例如，B44C，H01L，例如，H01L21/00，H05K）
G03F7/004	.感光材料（G03F7/12，G03F7/14优先）
G03F7/039	..可光降解的高分子化合物，例如，正电子抗蚀剂（G03F7/075优先；高分子苯醌重氮化合物入G03F7/023）