- Patent Title: Error rates for memory with built in error correction and detection
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Application No.: US17326927Application Date: 2021-05-21
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Publication No.: US11640334B2Publication Date: 2023-05-02
- Inventor: Monish Shah
- Applicant: Microsoft Technology Licensing, LLC
- Applicant Address: US WA Redmond
- Assignee: Microsoft Technology Licensing, LLC
- Current Assignee: Microsoft Technology Licensing, LLC
- Current Assignee Address: US WA Redmond
- Agency: Ray Quinney & Nebeker
- Agent Tiffany Healy
- Main IPC: G06F11/00
- IPC: G06F11/00 ; G06F11/10

Abstract:
The methods and systems improve uncorrectable error (UE) and silent data corruption (SDC) rates for memory chips and improve error correction of the memory chips. The systems may include a memory bank with a plurality of memory chips in communication with a memory controller. The memory bank may use one additional memory chip that stores a bitwise parity of the data stored in the remaining memory chips of the memory bank. The parity bits are used to rebuild corrupted data when a UE occurs. The parity bits are also used to detect whether a SDC occurred in the data.
Public/Granted literature
- US20220374307A1 ERROR RATES FOR MEMORY WITH BUILT IN ERROR CORRECTION AND DETECTION Public/Granted day:2022-11-24
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