Invention Grant
- Patent Title: Pseudo-dual-port SRAM with burst-mode address comparator
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Application No.: US17448846Application Date: 2021-09-24
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Publication No.: US11640838B2Publication Date: 2023-05-02
- Inventor: Arun Babu Pallerla , Changho Jung , Chulmin Jung
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Haynes and Boone, LLP
- Main IPC: G11C11/418
- IPC: G11C11/418 ; G11C7/22 ; G11C7/10 ; H03K19/21 ; G11C7/06 ; G11C5/14

Abstract:
A memory is provided that is configured to practice two different modes of read operation, such as both a normal read operation and a burst-mode read operation. In one example, the memory is a pseudo-dual-port memory. The memory may include an address comparator to perform a time-division multiplexing to first compare a read address to a stored address and then to compare a write address to the stored address.
Public/Granted literature
- US20230093852A1 PSEUDO-DUAL-PORT SRAM WITH BURST-MODE ADDRESS COMPARATOR Public/Granted day:2023-03-30
Information query
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