Invention Grant
- Patent Title: Plasma enhanced deposition of silicon-containing films at low temperature
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Application No.: US17125349Application Date: 2020-12-17
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Publication No.: US11640905B2Publication Date: 2023-05-02
- Inventor: Aykut Aydin , Rui Cheng , Karthik Janakiraman
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/455
Abstract:
Exemplary deposition methods may include flowing a silicon-containing precursor into a processing region of a semiconductor processing chamber. The method may include striking a plasma in the processing region between a faceplate and a pedestal of the semiconductor processing chamber. The pedestal may support a substrate including a patterned photoresist. The method may include maintaining a temperature of the substrate less than or about 200° C. The method may also include depositing a silicon-containing film along the patterned photoresist.
Public/Granted literature
- US20220199404A1 PLASMA ENHANCED DEPOSITION OF SILICON-CONTAINING FILMS AT LOW TEMPERATURE Public/Granted day:2022-06-23
Information query
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