Invention Grant
- Patent Title: Semiconductor epitaxial wafer and method of producing semiconductor epitaxial wafer, and method of producing solid-state imaging device
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Application No.: US17387001Application Date: 2021-07-28
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Publication No.: US11640907B2Publication Date: 2023-05-02
- Inventor: Ryosuke Okuyama
- Applicant: SUMCO CORPORATION
- Applicant Address: JP Tokyo
- Assignee: SUMCO CORPORATION
- Current Assignee: SUMCO CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: JPJP2017-141117 20170720
- Main IPC: H01L21/265
- IPC: H01L21/265 ; H01L21/20 ; H01L21/205 ; H01L21/30 ; H01L21/322 ; H01L21/324 ; H01L27/146 ; H01L29/04 ; H01L21/02
Abstract:
An epitaxial wafer that includes a silicon wafer and an epitaxial layer on the silicon wafer. The silicon wafer contains hydrogen that has a concentration profile including a first peak and a second peak. A hydrogen peak concentration of the first peak and a hydrogen peak concentration of the second peak are each not less than 1×1017 atoms/cm3.
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