Invention Grant
- Patent Title: Techniques and apparatus for unidirectional hole elongation using angled ion beams
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Application No.: US16676857Application Date: 2019-11-07
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Publication No.: US11640909B2Publication Date: 2023-05-02
- Inventor: Kevin Anglin , Simon Ruffell
- Applicant: APPLIED Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED Materials, Inc.
- Current Assignee: APPLIED Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: KDW Firm PLLC
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H01L21/02 ; H01L21/311 ; H01J37/32 ; H01L21/67
Abstract:
A method of patterning a substrate. The method may include providing a cavity in a layer, disposed on the substrate, the cavity having a first length along a first direction and a first width along a second direction, perpendicular to the first direction, and wherein the layer has a first height along a third direction, perpendicular to the first direction and the second direction. The method may include depositing a sacrificial layer over the cavity in a first deposition procedure; and directing angled ions to the cavity in a first exposure, wherein the cavity is etched, and wherein after the first exposure, the cavity has a second length along the first direction, greater than the first length, and wherein the cavity has a second width along the second direction, no greater than the first width.
Information query
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