Invention Grant
- Patent Title: Heat dispersion layers for double sided interconnect
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Application No.: US17412423Application Date: 2021-08-26
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Publication No.: US11640928B2Publication Date: 2023-05-02
- Inventor: Hsin-Yen Huang , Shao-Kuan Lee , Shau-Lin Shue , Hsiao-Kang Chang , Cherng-Shiaw Tsai
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L23/48 ; H01L23/52 ; H01L23/367 ; H01L23/522 ; H01L23/373

Abstract:
Various embodiments of the present disclosure are directed towards a semiconductor structure including a device layer having a front-side surface opposite a back-side surface. A first heat dispersion layer is disposed along the back-side surface of the device layer. A second heat dispersion layer underlies the front-side surface of the device layer. The second heat dispersion layer has a thermal conductivity lower than a thermal conductivity of the first heat dispersion layer.
Public/Granted literature
- US20230066284A1 HEAT DISPERSION LAYERS FOR DOUBLE SIDED INTERCONNECT Public/Granted day:2023-03-02
Information query
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