A semiconductor structure and the manufacturing method thereof are disclosed. An exemplary semiconductor structure includes a first source/drain contact and a second source/drain contact spaced apart by a gate structure, an etch stop layer (ESL) over the first source/drain contact and the second source/drain contact, a conductive feature disposed in the etch stop layer and in direct contact with the first source/drain contact and the second source/drain contact, a dielectric layer over the etch stop layer, and a contact via extending through the dielectric layer and electrically connected to the conductive feature. By providing the conductive feature, a number of metal lines in an interconnect structure of the semiconductor structure may be advantageously reduced.