In a method for forming a semiconductor device, a plurality of conductive lines is formed as a part of a first wiring level of the semiconductor device. The first wiring level is positioned over a first level having a plurality of transistor devices. The plurality of conductive lines extends parallel to the first level. In addition, a programmable horizontal bridge is formed that extends parallel to the first level, and electrically connects a first conductive line and a second conductive line of the plurality of conductive lines in the first wiring level. The programmable horizontal bridge is formed based on a programmable material that changes phase between a conductive state and a non-conductive state according to a current pattern delivered to the programmable horizontal bridge.