Invention Grant
- Patent Title: Methods of forming interconnection structure including conductive graphene layers
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Application No.: US17314269Application Date: 2021-05-07
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Publication No.: US11640940B2Publication Date: 2023-05-02
- Inventor: Shu-Wei Li , Yu-Chen Chan , Shin-Yi Yang , Ming-Han Lee , Shau-Lin Shue
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: NZ Carr Law Office
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/532

Abstract:
An interconnection structure, along with methods of forming such, are described. The interconnection structure includes a first portion of a conductive layer, and the conductive layer includes one or more graphene layers. The first portion of the conductive layer includes a first interface portion and a second interface portion opposite the first interface portion, and each of the first and second interface portion includes a metal disposed between adjacent graphene layers. The structure further includes a second portion of the conductive layer disposed adjacent the first portion of the conductive layer, and the second portion of the conductive layer includes a third interface portion and a fourth interface portion opposite the third interface portion. Each of the third and fourth interface portion includes the metal disposed between adjacent graphene layers. The structure further includes a dielectric material disposed between the first and second portions of the conductive layer.
Public/Granted literature
- US20220359414A1 INTERCONNECTION STRUCTURE AND METHODS OF FORMING THE SAME Public/Granted day:2022-11-10
Information query
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