Invention Grant
- Patent Title: Semiconductor wafer and method for fabricating the same
-
Application No.: US17464151Application Date: 2021-09-01
-
Publication No.: US11640943B2Publication Date: 2023-05-02
- Inventor: Jung-A Lee , Yeon Sook Kim , Han Byul Jang
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: KR10-2020-0143312 20201030
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L25/065 ; H01L25/18 ; H01L23/00 ; H01L25/00

Abstract:
A semiconductor wafer includes a wafer body including an active layer having a first crystal orientation and having first and second surfaces opposing each other, and a support layer having a second crystal orientation different from the first crystal orientation and having third and fourth surfaces opposing each other, a bevel portion that extends along an outer periphery of the wafer body to connect the first surface to the fourth surface, and a notch portion formed at a predetermined depth in a direction from the outer periphery of the wafer body toward a center portion of the wafer body. The bevel portion includes a first beveled surface connected to the first surface and a second beveled surface connected to the fourth surface. The first beveled surface has a width in a radial direction of the wafer body that is 300 μm or less.
Public/Granted literature
- US20220139841A1 SEMICONDUCTOR WAFER AND METHOD FOR FABRICATING THE SAME Public/Granted day:2022-05-05
Information query
IPC分类: