A method of forming a semiconductor structure includes following steps. A first substrate and a second substrate are bonded together, in which the first substrate has a landing pad. The second substrate is etched to form an opening, in which the landing pad is exposed through the opening. A metal layer is formed over the landing pad and a sidewall of the second substrate that surrounds the opening. A buffer structure is formed over the metal layer. The buffer structure is etched such that a top surface of the buffer structure is below a top surface of the metal layer. A barrier structure is formed over metal layer and the buffer structure.