Invention Grant
- Patent Title: Semiconductor device and method of manufacturing semiconductor device
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Application No.: US17341518Application Date: 2021-06-08
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Publication No.: US11640953B2Publication Date: 2023-05-02
- Inventor: Masatake Harada
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JPJP2020-156028 20200917
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/488 ; H01L21/50

Abstract:
An object is to provide a technique capable of regulating a direction in which an adhesive agent used for bonding a base plate and a case is wetly widened. A semiconductor device includes a base plate and a case. The case is bonded to a peripheral edge part of the base plate via an adhesive agent. A dip which is an application position where the adhesive agent is applied and an inclined surface directed downward from the dip toward an outer peripheral side or an inclined surface directed downward from the dip toward an inner peripheral side are formed in the peripheral edge part of the base plate.
Public/Granted literature
- US20220084983A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2022-03-17
Information query
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