The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor chip having a first main surface including an active region and a peripheral region surrounding the active region; a first trench formed in the active region; a first insulating film formed on an inner surface of the first trench; a first electrode formed in the first trench interfacing the first insulating film, and forming a channel in a portion of the semiconductor chip facing the first insulating film; a second trench formed in the peripheral region and having a width greater a width of the first trench; a second insulating film formed on an inner surface of the second trench; and a second electrode formed in the second trench interfacing the second insulating film and electrically coupled to the first electrode.