Invention Grant
- Patent Title: Power semiconductor devices including a trenched gate and methods of forming such devices
-
Application No.: US17080956Application Date: 2020-10-27
-
Publication No.: US11640990B2Publication Date: 2023-05-02
- Inventor: Daniel Lichtenwalner , Sei-Hyung Ryu , Naeem Islam , Woongsun Kim , Matt N. McCain , Joe McPherson
- Applicant: Wolfspeed, Inc.
- Applicant Address: US NC Durham
- Assignee: Wolfspeed, Inc.
- Current Assignee: Wolfspeed, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel, P.A.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/16 ; H01L29/66
Abstract:
Semiconductor devices and methods of forming the devices are provided. Semiconductor devices include a semiconductor layer structure comprising a trench in an upper surface thereof, a dielectric layer in a lower portion of the trench, and a gate electrode in the trench and on the dielectric layer opposite the semiconductor layer structure. The trench may include rounded upper corner and a rounded lower corner. A center portion of a top surface of the dielectric layer may be curved, and the dielectric layer may be on opposed sidewalls of the trench. The dielectric layer may include a bottom dielectric layer on a bottom surface of the trench and on lower portions of the sidewalls of the trench and a gate dielectric layer on upper portions of the sidewalls of the trench and on the bottom dielectric layer.
Public/Granted literature
- US20220130995A1 POWER SEMICONDUCTOR DEVICES INCLUDING A TRENCHED GATE AND METHODS OF FORMING SUCH DEVICES Public/Granted day:2022-04-28
Information query
IPC分类:
