Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
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Application No.: US17198377Application Date: 2021-03-11
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Publication No.: US11640991B2Publication Date: 2023-05-02
- Inventor: Hiroaki Katou , Yasuhiro Kawai , Atsuro Inada , Toshifumi Nishiguchi
- Applicant: Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
- Applicant Address: JP Tokyo; JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee Address: JP Tokyo; JP Tokyo
- Agency: Allen & Overy LLP
- Priority: JPJP2020-157500 20200918
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/06
Abstract:
According to one embodiment, a semiconductor device includes a first electrode, first, second, and third semiconductor regions, an insulating portion, a conductive portion, a gate electrode, and a second electrode. The first semiconductor region is provided on the first electrode and electrically connected to the first electrode. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided on the second semiconductor region. The insulating portion are arranged with a portion of the first semiconductor region, and the second and third semiconductor regions. The conductive portion is provided inside the insulating portion and arranged with the first semiconductor region. The gate electrode is provided inside the insulating portion and arranged with the second semiconductor region. The second electrode is provided on the third semiconductor region and electrically connected to the third semiconductor region.
Public/Granted literature
- US20220093789A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2022-03-24
Information query
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