Invention Grant
- Patent Title: 3D IC antenna array with laminated high-k dielectric
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Application No.: US17308315Application Date: 2021-05-05
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Publication No.: US11641064B2Publication Date: 2023-05-02
- Inventor: Wen-Shiang Liao , Feng Wei Kuo
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01Q21/00
- IPC: H01Q21/00 ; H01Q13/10 ; H01Q1/22 ; H01L21/768 ; H01L23/66 ; H01Q21/06 ; H01Q1/48 ; H01Q9/04

Abstract:
The present disclosure relates to a semiconductor package device including a stacked antenna structure with a high-k laminated dielectric layer separating antenna and ground planes, and a method of manufacturing the structure. A semiconductor die is laterally encapsulated within an insulating structure comprising a first redistributions structure. A second redistribution structure is disposed over and electrically coupled to the first redistribution structure and the die. The second redistribution structure includes the stacked antenna structure which includes first and second conductive planes separated by a high dielectric constant laminated dielectric structure. The first conductive plane includes openings and the second conductive plane is configured to transmit and receive electromagnetic waves through the openings in the first conductive plane.
Public/Granted literature
- US20210257745A1 3D IC ANTENNA ARRAY WITH LAMINATED HIGH-K DIELECTRIC Public/Granted day:2021-08-19
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