Invention Grant
- Patent Title: Film bulk acoustic resonator
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Application No.: US17016887Application Date: 2020-09-10
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Publication No.: US11641184B2Publication Date: 2023-05-02
- Inventor: Xiaochuan Wang
- Applicant: Ningbo Semiconductor International Corporation
- Applicant Address: CN Ningbo
- Assignee: Ningbo Semiconductor International Corporation
- Current Assignee: Ningbo Semiconductor International Corporation
- Current Assignee Address: CN Ningbo
- Agency: Anova Law Group PLLC
- Priority: CN201511003828.3 20151228
- Main IPC: H03H9/17
- IPC: H03H9/17 ; H03H3/02 ; H03H9/02 ; H01L41/277 ; H03H9/05

Abstract:
Film bulk acoustic resonator (FBAR) is provided. An exemplary FBAR includes a substrate; a first insulating material layer on the substrate, the first insulating material layer containing a first cavity; a second insulating material layer on the first insulating material layer, the second insulating material layer containing a second cavity and a third cavity spaced apart from the second cavity, the second cavity and the third cavity both in communication with the first cavity; a resonator sheet covering the second cavity and partially extending over the second insulating material layer; a third insulating material layer over the second insulating material layer and the resonator sheet, the third insulating material layer containing a fourth cavity, the fourth cavity in communication with the third cavity, and the fourth cavity partially overlapping the second cavity; and a capping layer on the third insulating material layer.
Information query
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