A method and a system are described for improving a dynamic range of a CMOS image sensor by pixel-embedded signal amplification. An electromagnetic radiation is incident for a predetermined duration on a pixel array including a plurality of photodiodes. The photodiodes release electrons in form of an input electronic signal and the released input signal is temporarily stored in a storage node. The said input signal is then transferred to a gate of an in-pixel amplifier, which is configured to dynamically alternate between modes of capacitance and switched biasing, using a single in-pixel switch. Then, the in-pixel amplifier is modulated while in capacitance mode for a voltage build-up and this augment gain of the input signal. Thereafter, the in-pixel amplifier alternates to a switched biasing mode for suppression of noise signals. Finally, a resultant electronic signal is generated with a high gain after processing and suppression of the noise signals.