Invention Grant
- Patent Title: Memory device and manufacturing method thereof
-
Application No.: US17151669Application Date: 2021-01-19
-
Publication No.: US11641736B2Publication Date: 2023-05-02
- Inventor: Huixian Lai , Chao-Wei Lin , Chia-Yi Chu
- Applicant: Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: CN Quanzhou
- Assignee: Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: CN Quanzhou
- Agent Winston Hsu
- Priority: CN202020139552.1 20200121
- Main IPC: H01L27/108
- IPC: H01L27/108

Abstract:
The invention provides a memory and a forming method thereof. By connecting two node contact parts filled in two node contact windows at the edge and adjacent to each other, a large-sized combined contact can be formed, so that when preparing the node contact parts, the morphology of the combined contact at the edge position can be effectively ensured, and under the blocking protection of the combined contact with a large width, the rest of the node contact parts can be prevented from being greatly eroded, and the morphology accuracy of the independently arranged node contact parts can be improved, thereby being beneficial to improving the device performance of the formed memory.
Public/Granted literature
- US20210225851A1 Memory device and manufacturing method thereof Public/Granted day:2021-07-22
Information query
IPC分类: