Invention Grant
- Patent Title: Semiconductor non-volatile memory devices
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Application No.: US16889726Application Date: 2020-06-01
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Publication No.: US11641739B2Publication Date: 2023-05-02
- Inventor: Yongshun Sun , Eng Huat Toh , Shyue Seng Tan , Xinshu Cai , Lanxiang Wang
- Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agent David Cain
- Main IPC: H01L27/11558
- IPC: H01L27/11558 ; H01L27/11539 ; H01L29/66
Abstract:
A memory device is provided. The memory device includes an active region in a substrate, an electrically-isolated electrode, and a dielectric layer. The electrically-isolated electrode is disposed over the active region. The dielectric layer is disposed between the electrically-isolated electrode and the active region and has a first dielectric portion having a first thickness and a second dielectric portion having a second thickness.
Public/Granted literature
- US20210375895A1 SEMICONDUCTOR NON-VOLATILE MEMORY DEVICES Public/Granted day:2021-12-02
Information query
IPC分类:
