Invention Grant
- Patent Title: Semiconductor memory device
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Application No.: US17010181Application Date: 2020-09-02
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Publication No.: US11641740B2Publication Date: 2023-05-02
- Inventor: Takamitsu Ochi , Shunsuke Kasashima
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JPJP2020-023556 20200214
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/11565 ; G11C16/04
Abstract:
A device includes conductor layers and a first pillar, extending through the conductor layers, that includes a first columnar portion, a second columnar portion, and a middle portion between the first and second columnar portions. A diameter of the middle portion is larger than a diameter of the first columnar portion and larger than a diameter of the second columnar portion. The first columnar portion includes a first semiconductor layer and a first charge storage layer. The second columnar portion includes a second semiconductor layer and a second charge storage layer. The middle portion includes a third semiconductor layer. The first and second semiconductor layers are in contact with the third semiconductor layer on a first side and a second side of the third semiconductor layer, respectively. The first charge storage layer is spaced from the second charge storage layer.
Public/Granted literature
- US20210257383A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2021-08-19
Information query
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