Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
-
Application No.: US17325134Application Date: 2021-05-19
-
Publication No.: US11641749B2Publication Date: 2023-05-02
- Inventor: Dong Jun Seong , Jun Hwan Paik , Hyung Jong Jeong
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2018-0103252 20180831
- Main IPC: H01L27/24
- IPC: H01L27/24 ; H01L45/02 ; H01L45/00
Abstract:
A semiconductor device includes a first electrode and a first carbon layer on the first electrode. A switch layer is disposed on the first carbon layer and a second carbon layer is disposed on the switch layer. At least one tunneling oxide layer is disposed between the first carbon layer and the second carbon layer. The device further includes a second electrode on the second carbon layer.
Public/Granted literature
- US20210273016A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2021-09-02
Information query
IPC分类:
