A method includes forming a plurality of first semiconductor mesa structures at a first semiconductor substrate. The first semiconductor substrate has a first conductivity type. The method further includes forming a plurality of second semiconductor mesa structures at a second semiconductor substrate. The second semiconductor substrate has a second conductivity type. The method further includes providing a glass substrate between the first semiconductor substrate and the second semiconductor substrate. The method includes connecting the first semiconductor substrate to the second semiconductor substrate so that at least a portion of the glass substrate is located laterally between the first semiconductor mesa structures of the plurality of first semiconductor mesa structures and the second semiconductor mesa structures of the plurality of second semiconductor mesa structures.