Invention Grant
- Patent Title: Memory device
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Application No.: US17833415Application Date: 2022-06-06
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Publication No.: US11641786B2Publication Date: 2023-05-02
- Inventor: Paolo Giuseppe Cappelletti , Gabriele Navarro
- Applicant: STMicroelectronics S.r.l. , COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES
- Applicant Address: IT Agrate Brianza; FR Paris
- Assignee: STMicroelectronics S.r.l.,COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES
- Current Assignee: STMicroelectronics S.r.l.,COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES
- Current Assignee Address: IT Agrate Brianza; FR Paris
- Agency: Crowe & Dunlevy
- Priority: FR1857389 20180808
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24
Abstract:
A phase-change memory cell includes, in at least a first portion, a stack of at least one germanium layer covered by at least one layer made of a first alloy of germanium, antimony, and tellurium In a programmed state, resulting from heating a portion of the stack to a sufficient temperature, portions of layers of germanium and of the first alloy form a second alloy made up of germanium, antimony, and tellurium, where the second alloy has a higher germanium concentration than the first alloy.
Public/Granted literature
- US20220302379A1 MEMORY DEVICE Public/Granted day:2022-09-22
Information query
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