Invention Grant
- Patent Title: Energy recovery system for a semiconductor fabrication facility
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Application No.: US17556762Application Date: 2021-12-20
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Publication No.: US11644218B2Publication Date: 2023-05-09
- Inventor: Thomas Huang
- Applicant: GlobalFoundries U.S. Inc.
- Applicant Address: US NY Malta
- Assignee: GLOBALFOUNDRIES U.S. INC.
- Current Assignee: GLOBALFOUNDRIES U.S. INC.
- Current Assignee Address: US NY Malta
- Agency: Hoffman Warnick LLC
- Agent Francois Pagette
- Main IPC: H01L21/67
- IPC: H01L21/67 ; F24H1/00

Abstract:
One illustrative energy recovery system disclosed herein includes a facility and a closed chilled water loop including a chilled water stream delivered to the facility and a returning water stream that is received from the facility. In this example, the system also includes a primary heat exchanger having a first fluid side and a second fluid side, the first fluid side is adapted to receive supply water and the second fluid side is adapted to receive at least a portion of the returning return water stream. The primary heat exchanger is adapted to effectuate heat transfer between the supply water flowing in the first fluid side and the returning water stream flowing in the second fluid side.
Public/Granted literature
- US20220113060A1 ENERGY RECOVERY SYSTEM FOR A SEMICONDUCTOR FABRICATION FACILITY Public/Granted day:2022-04-14
Information query
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