Invention Grant
- Patent Title: Apparatus for monitoring power in a semiconductor device
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Application No.: US17399536Application Date: 2021-08-11
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Publication No.: US11644486B2Publication Date: 2023-05-09
- Inventor: Myung Hwan Lee
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR 20210041877 2021.03.31
- Main IPC: G01R19/10
- IPC: G01R19/10 ; G01R19/165

Abstract:
A power circuit includes at least one power detector coupled to both a first power voltage input via a pin or pad and a second power voltage supplied into a component, and configured to output a sensed power voltage changed from the first power voltage in response to a drop of the second power voltage, and a comparator configured to compare the sensed power voltage with a reference voltage to output a power sensing result.
Public/Granted literature
- US20220317163A1 APPARATUS FOR MONITORING POWER IN A SEMICONDUCTOR DEVICE Public/Granted day:2022-10-06
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