A storage device includes a nonvolatile memory device that includes a first region including memory cells configured to store n-bit data and a second region including memory cells configured to store m-bit data and a memory controller, where n and m are natural numbers and n is less than m. The first region includes a first area and a second area, and the second region includes a third area. The memory controller is configured to perform one of a turbo write operation on the first area or the second area and a normal write operation on the third area, and configured to perform one of a turbo read operation on the first area or the second area and a normal read operation on the third area.