Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17216323Application Date: 2021-03-29
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Publication No.: US11645072B2Publication Date: 2023-05-09
- Inventor: Hyun Pil Kim , Hyun Woo Sim , Seong Woo Ahn
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: KR 20170042125 2017.03.31
- The original application number of the division: US15717989 2017.09.28
- Main IPC: G06F9/30
- IPC: G06F9/30 ; G06F1/3287 ; G06T1/20

Abstract:
A semiconductor device including a first processor having a first register, the first processor configured to perform region of interest (ROI) calculations using the first register; and a second processor having a second register, the second processor configured to perform arithmetic calculations using the second register. The first register is shared with the second processor, and the second register is shared with the first processor.
Public/Granted literature
- US20210216312A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-07-15
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