Invention Grant
- Patent Title: Method for manufacturing semiconductor device
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Application No.: US17678150Application Date: 2022-02-23
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Publication No.: US11646208B2Publication Date: 2023-05-09
- Inventor: Masakazu Watanabe , Shuhei Eguchi
- Applicant: DENSO CORPORATION
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: JP 2019154920 2019.08.27
- Main IPC: H01L21/38
- IPC: H01L21/38 ; H01L21/385 ; H01L21/477
Abstract:
A method for manufacturing a semiconductor device is provided. The method includes forming an organosilicon compound layer on a surface of an oxide semiconductor substrate, heating the oxide semiconductor substrate provided with the organosilicon compound layer at a first temperature to form a silicon diffusion layer inside the oxide semiconductor substrate, and removing the organosilicon compound layer from the surface of the oxide semiconductor substrate after heating the oxide semiconductor substrate at the first temperature.
Public/Granted literature
- US20220181164A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2022-06-09
Information query
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