Invention Grant
- Patent Title: Method of forming a semiconductor device with air gaps for low capacitance interconnects
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Application No.: US17571688Application Date: 2022-01-10
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Publication No.: US11646227B2Publication Date: 2023-05-09
- Inventor: Kandabara Tapily
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- The original application number of the division: US16379402 2019.04.09
- Main IPC: C23C16/455
- IPC: C23C16/455 ; C23C16/40 ; H01L21/285 ; C23C16/04 ; H01L21/764 ; H01L21/768 ; H01L21/02
Abstract:
A method of fabricating air gaps in advanced semiconductor devices for low capacitance interconnects. The method includes exposing a substrate to a gas pulse sequence to deposit a material that forms an air gap between raised features.
Public/Granted literature
- US20220130723A1 METHOD OF FORMING A SEMICONDUCTOR DEVICE WITH AIR GAPS FOR LOW CAPACITANCE INTERCONNECTS Public/Granted day:2022-04-28
Information query
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