Invention Grant
- Patent Title: Semiconductor device with horizontally arranged capacitor and method for fabricating the same
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Application No.: US17352681Application Date: 2021-06-21
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Publication No.: US11646262B2Publication Date: 2023-05-09
- Inventor: Yu-Han Hsueh
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L23/528 ; H01L49/02

Abstract:
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a first palm portion positioned above a substrate; a second palm portion positioned above the substrate and opposite to the first palm portion; a first finger portion arranged substantially in parallel with a main surface of the substrate, positioned between the first palm portion and the second palm portion, and connecting to the first palm portion; a second finger portion arranged substantially in parallel with the first finger portion, positioned between the first palm portion and the second palm portion, and connecting to the second palm portion; a capacitor insulation layer positioned between the first finger portion and the second finger portion; a first spacer positioned between the first palm portion and second finger portion; and a second spacer positioned between the second palm portion and the first finger portion.
Public/Granted literature
- US20220406706A1 SEMICONDUCTOR DEVICE WITH HORIZONTALLY ARRANGED CAPACITOR AND METHOD FOR FABRICATING THE SAME Public/Granted day:2022-12-22
Information query
IPC分类: