Invention Grant
- Patent Title: Contact pad structures and methods for fabricating contact pad structures
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Application No.: US17184659Application Date: 2021-02-25
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Publication No.: US11646279B2Publication Date: 2023-05-09
- Inventor: Xiaodong Li , Ramasamy Chockalingam , Juan Boon Tan
- Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agency: Viering Jentschura & Partner MBB
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/00

Abstract:
A semiconductor structure may be provided, including a conductive pad, a slot arranged through the conductive pad, a passivation layer arranged over the conductive pad and a plurality of electrical interconnects arranged under the conductive pad. The conductive pad may include an electrically conductive material and the slot may include an electrically insulating material. The passivation layer may include an opening that may expose a portion of the conductive pad and the slot may be arranged laterally between the exposed portion of the conductive pad and the plurality of electrical interconnects.
Public/Granted literature
- US20220270991A1 CONTACT PAD STRUCTURES AND METHODS FOR FABRICATING CONTACT PAD STRUCTURES Public/Granted day:2022-08-25
Information query
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