Invention Grant
- Patent Title: Method for fabricating semiconductor device
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Application No.: US17517560Application Date: 2021-11-02
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Publication No.: US11646280B2Publication Date: 2023-05-09
- Inventor: Jung-Hsing Chien
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agent Xuan Zhang
- The original application number of the division: US16674367 2019.11.05
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/02
Abstract:
The present application discloses a method for fabricating a semiconductor device. The method for fabricating a semiconductor device includes providing a substrate, forming a pad structure above the substrate, and forming a top groove on a top surface of the pad structure.
Public/Granted literature
- US20220059478A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2022-02-24
Information query
IPC分类:
