Invention Grant
- Patent Title: Methods for using a gas permeable layer to form air gaps in an image sensor
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Application No.: US16948799Application Date: 2020-10-01
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Publication No.: US11646337B2Publication Date: 2023-05-09
- Inventor: Nathan Wayne Chapman , Brian Anthony Vaartstra , Amanda Thuy Trang Vu
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Scottsdale
- Agency: Treyz Law Group, P.C.
- Agent Jason Tsai
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
An image sensor with uniform, well-controlled air gaps is provided. A structure that is at least partially filled with organic material may be formed on the image sensor. A hybrid organic/inorganic film layer may be formed over the organic material. The image sensor may then be exposed to energy, which causes the organic material to sublimate through the hybrid film layer, which itself may become a gas permeable layer when exposed to energy. After sublimation, the regions where the organic material was previously filled become air gaps with a low index of refraction. Air gaps formed in this way can be configured over photodiodes as light guides or focusing structures, as concave/convex microlenses, in between photodiodes as isolation structures, in between color filter elements to reduce crosstalk, and/or over microlenses to enhancing focusing power.
Public/Granted literature
- US20220013563A1 IMAGE SENSORS WITH CONTROLLED AIR GAPS Public/Granted day:2022-01-13
Information query
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