Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17188974Application Date: 2021-03-01
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Publication No.: US11646368B2Publication Date: 2023-05-09
- Inventor: Tomoaki Inokuchi , Hiro Gangi , Yusuke Kobayashi , Ryosuke Iijima
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP 2020125264 2020.07.22 JP 2021028206 2021.02.25
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/10 ; H01L29/66 ; H01L29/40 ; H01L29/06

Abstract:
According to one embodiment, a semiconductor device includes a supporter including a first surface, first, second, and third conductive parts, a semiconductor region, and an insulating part. A first direction from the first toward second conductive part is along the first surface. The semiconductor region includes first, second, and third partial regions. A second direction from the first toward second partial region is along the first surface and crosses the first direction. The third partial region is between the first partial region and the second conductive part in the first direction. The third partial region includes a counter surface facing the second conductive part. A direction from the counter surface toward the third conductive part is along the second direction. The insulating part includes an insulating region. At least a portion of the insulating region is between the counter surface and the third conductive part.
Public/Granted literature
- US20220029012A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-01-27
Information query
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