- Patent Title: Silicon carbide semiconductor device having a conductive layer formed above a bottom surface of a well region so as not to be in ohmic connection with the well region and power converter including the same
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Application No.: US17202347Application Date: 2021-03-16
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Publication No.: US11646369B2Publication Date: 2023-05-09
- Inventor: Yuichi Nagahisa , Shiro Hino , Koji Sadamatsu , Hideyuki Hatta , Kotaro Kawahara
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Xsensus LLP
- Priority: JP 17033097 2017.02.24
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/16 ; H01L29/417 ; H01L29/47 ; H02M7/5387 ; H01L29/06 ; H01L27/06 ; H02P27/08 ; H01L29/872 ; H01L21/8234
Abstract:
In an SiC-MOSFET with a built-in Schottky diode, a bipolar current may be passed in a second well region formed at a terminal part to reduce a breakdown voltage. In the SiC-MOSFET with the built-in Schottky diode, a conductive layer in Schottky connection with the second well region is provided on the second well region in the terminal part, and the conductive layer is electrically connected with a source electrode of the MOSFET. A conductive layer contact hole is provided for connecting only the conductive layer and the source electrode.
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